GTVA262701FA-V2

High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz

The GTVA262701FA is a 270-watt GaN-on-SiC HEMT D-mode amplifier for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.

Product Specifications

Part Number
GTVA262701FA-V2
Description
High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz
Min Frequency (MHz)
2620
Max Frequency(MHz)
2690
P3dB Output Power(W)
270
Gain(dB)
17.0
Efficiency(%)
42
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Typical Pulsed CW performance; 2690 MHz; 48 V, 10% duty cycle
  • Output power P3dB 270 W
  • Efficiency 66 %
  • Gain 18.1 dB
  • Capable of handling 10:1 VSWR @ 48 V, 60 W (WCDMA) output power
  • Pb-free and RoHS compliant
  • Input matched

Technical Resources

Datasheet


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GTVA262701FA-V2
270W 48V 2620-2690 MHz GaN-SiC HEMT