GTRB186002FC-V1

High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz

The GTRB184402FC is a 440-watt (P4dB) GaN-on-SiC high HEMT D-mode amplifier designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRB186002FC-V1
Description
High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz
Min Frequency (MHz)
1805
Max Frequency(MHz)
1880
P3dB Output Power(W)
500
Gain(dB)
15.7
Efficiency(%)
54
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Typical Pulsed CW performance, 1880 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
  • Output power at P3dB = 500 W
  • Efficiency at P3dB = 68%
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS compliant

Technical Resources

Datasheet


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GTRB186002FC-V1
500W,48V,1805-1880MHz,GaN HEMT